advanced power n-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss 35v simple drive requirement r ds(on) 45m fast switching characteristic i d 20a rohs compliant description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 4.8 /w rthj-a thermal resistance junction-ambient max. 110 /w data & specifications subject to change without notice ap4416gh/j parameter rating pb free plating product drain-source voltage 35 gate-source voltage 20 continuous drain current 20 continuous drain current 12 pulsed drain current 1 50 operating junction temperature range -55 to 150 linear derating factor 0.21 storage temperature range total power dissipation 26 -55 to 150 200418051-1/4 thermal data parameter the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap4416gj) is available for low-profile applications. g d s to-251(j) g d s to-252(h) g d s
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 35 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.03 - v/ r ds(on) static drain-source on-resistance 2 v gs =10v, i d =12a - - 45 m v gs =4.5v, i d =8a - - 65 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =11a - 10 - s i dss drain-source leakage current (t j =25 o c) v ds =30v, v gs =0v - - 1 ua drain-source leakage current (t j =150 o c) v ds =24v, v gs =0v - - 25 ua i gss gate-source leakage v gs =20v - - 100 na q g total gate charge 2 i d =12a - 6 10 nc q gs gate-source charge v ds =30v - 2 - nc q gd gate-drain ("miller") charge v gs =4.5v - 3.5 - nc t d(on) turn-on delay time 2 v ds =15v - 6 - ns t r rise time i d =12a - 36 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 11 - ns t f fall time r d =1.25 -2- ns c iss input capacitance v gs =0v - 460 740 pf c oss output capacitance v ds =25v - 80 - pf c rss reverse transfer capacitance f=1.0mhz - 60 - pf r g gate resistance f=1.0mhz - 1.1 1.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =12a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =12a, v gs =0 v , - 17 - ns q rr reverse recovery charge di/dt=100a/s - 10 - nc notes: 1.pulse width limited by safe operating area. 2.pulse width < 300us , duty cycle < 2%. ap4416gh/j 2/4
ap4416gh/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 15 30 45 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 5.0v 4.5v v g =3.0v 0 15 30 45 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 5.0v 4.5v v g =3.0v 30 50 70 90 110 246810 v gs , gate-to-source voltage (v) r ds(on) (m ) i d =8a t c =25 o c 0.6 1.0 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =12a v g =10v 0 4 8 12 16 0 0.4 0.8 1.2 1.6 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.2 0.6 1 1.4 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v)
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 ap4416gh/j q v g 4.5v q gs q gd q g charge 0 4 8 12 16 04812 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =15v v ds =2 5 v v ds =30v i d =12a 10 100 1000 1 5 9 1317212529 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 10 20 30 0246810 v gs , gate-to-source voltage (v) i d , drain current (a) t j =150 o c t j =25 o c v ds =5v 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds ,drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse
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